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Displaying 18 results.
    • Journal article
    High-Temperature DC and RF behaviors of Partially-Depleted SOI MOSFET transistors
    Emam, M. Tinoco, C. Vanhoenacker-Janvier, Danielle[UCL] Raskin, Jean-Pierre[UCL] (2008) Solid-State Electronics — Vol. 52, no.12, p. 1924-1932 (2008)
    • Journal article
    Linearity analysis in Double Gate Graded-Channel SOI devices applied to 2-MOS MOSFET-C balanced structures
    Doria, R. T. Cerdeira, A. Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] Pavanello, M. A. (2008) ECS Transactions — Vol. 14, p. 273-282 (2008)
    • Journal article
    Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap
    Reckinger, N. Tang, Xiaohui[UCL] Dubois, E. Godey, S. Wallart, X. Raskin, Jean-Pierre[UCL] (2008) Journal of Applied Physics — Vol. 104, no.10, p. 103523 (2008)
    • Journal article
    Fabrication and Characterization of High Resistivity SOI Wafers for RF Applications
    Lederer, Dimitri[UCL] Roda Neve, Cesar[UCL] Olbrechts, Benoit[UCL] Raskin, Jean-Pierre[UCL] (2008) ECS Transactions — Vol. 16, no. 8, p. 165-174 (2008)
    • Journal article
    RF small-signal analysis of Schottky-barrier p-MOSFET
    Valentin, Raphael Dubois, Emmanuel Raskin, Jean-Pierre[UCL] Larrieu, Guilhem Dambrine, Gilles Lim, Tao Chuan Breil, Nicolas Danneville, Francois (2008) IEEE Transactions on Electron Devices — Vol. 55, no. 5, p. 1192-1202 (2008)
    • Journal article
    Characterization of ultrathin SOI film and application to short channel MOSFETs
    Tang, Xiaohui[UCL] Reckinger, Nicolas[UCL] Larrieu, Guilhem Dubois, Emmanuel Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Nysten, Bernard[UCL] Jonas, Alain M.[UCL] Bayot, Vincent[UCL] (2008) Nanotechnology — Vol. 19, no. 16, p. 165703 (2008)
    • Journal article
    A 7-dB 43-GHz CMOS distributed amplifier on high-resistivity SOI substrates
    Pavageau, Christophe Moussa, Mehdi Si[UCL] Raskin, Jean-Pierre[UCL] Vanhoenacker-Janvier, Danielle[UCL] Fel, Nicolas Russat, Jean Picheta, Laurence Danneville, Francois (2008) IEEE Transactions on Microwave Theory and Techniques — Vol. 56, no. 3, p. 587-598 (2008)
    • Journal article
    Silicon-on-Nothing MOSFETs: An efficient solution for parasitic substrate coupling suppression in SOI devices
    Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2008) Applied Surface Science — Vol. 254, no. 19, p. 6168-6173 (2008)
    • Journal article
    NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
    Balestra, F. Parker, E. Leadley, D.L. Mantl, S. Dubois, E. Engstrom, o. Clerc, R Cristoloveanu, Sorin Kurz, H. Raskin, Jean-Pierre[UCL] Lemme, M. Ionescu, A. Kasper, E. Karmous, A. Baus, M. Spangenberg, B. Ostling, M. Sangiorgi, E. Ghibaudo, G. Flandre, Denis[UCL] (2008) Materials Science in Semiconductor Processing — Vol. 11, no. 5-6, p. 148-159 (2008)
    • Journal article
    MIMC Reliability and Electrical Behavior Defined by a Physical Layer Property of the Dielectric
    Charavel, Rémy[UCL] Ackaert, J. Dhondt, K. Vlachakis, B. De Schepper, L. Millecam, M. Vandevelde, Eddy Bogaert, Pierre[UCL] De Backer, E. Ilin, Anton[UCL] Vlad, Alexandru[UCL] Raskin, Jean-Pierre[UCL] (2008) ECS Transactions — Vol. 13, no. 2, p. 83-90 (February 2008)
    • Journal article
    Out-of-plane topography of 3-D surface micromachined micro-sensors
    André, Nicolas[UCL] Sobieski, Stanislas[UCL] Francis, Laurent[UCL] Raskin, Jean-Pierre[UCL] (2008) Polytec InFocus - Optical Measurement Solutions — no. 2, p. 22-23 (February 2008)
    • Journal article
    High-frequency performance of Schottky Barrier p-MOSFET devices
    Raskin, Jean-Pierre[UCL] Pearman, D.J. Pailloncy, Guillaume[UCL] Larson, J.M. Snyder, J. Leadley, D.L. Whall, T.E. (2008) IEEE Electronic Device Letters — Vol. 29, no. 4, p. 396-398 (April 2008)
    • Journal article
    Reduction of Photo-Induced excess carriers in optically controlled microwave circuits on HR-Si
    Roda Neve, Cesar[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2008) Proceedings of the European Microwave Association — Vol. 4, p. 199-205 (June 2008)
    • Journal article
    Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap
    Reckinger, Nicolas[UCL] Tang, Xiaohui[UCL] Bayot, Vincent[UCL] Yarekha, Dmitri A. Dubois, E. Godey, Sylvie Wallart, Xavier Larrieu, Guilhem Laszcz, Adam Ratajczak, J. Raskin, Jean-Pierre[UCL] (2008) Journal of Applied Physics — Vol. 104, no. 10, p. 103523 (2008)
    • Journal article
    RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate
    Lederer, Dimitri Raskin, Jean-Pierre[UCL] (2008) IEEE Transactions on Electron Devices — Vol. 55, no. 7, p. 1664-1671 (2008)
    • Journal article
    Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
    Doria, Rodrigo Trevisoli Cerdeira, Antonio Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] Pavanello, Marcelo Antonio (2008) Microelectronics — Vol. 39, no. 12, p. 1663-1670 (2008)
    • Journal article
    High-Frequency Noise Performance of 60-nm Gate-Length FinFETs
    Raskin, Jean-Pierre[UCL] Pailloncy, Guillaume Lederer, Dimitri Danneville, Francois Dambrine, Gilles Decoutere, Stefaan[UCL] Mercha, Abdelkarim[UCL] Parvais, Bertrand[UCL] (2008) IEEE Transactions on Electron Devices — Vol. 55, no. 10, p. 2718-2727 (2008)
    • Journal article
    Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology
    El Kaamouchi, Majid[UCL] Delatte, Pierre[UCL] Moussa, M. Si[UCL] Raskin, Jean-Pierre[UCL] Vanhoenacker-Janvier, Danielle[UCL] (2008) Solid-State Electronics — Vol. 52, no. 12, p. 1915-1923 (2008)