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Displaying 25 results.
    • Speech
    Charge pumping characterization of SOI PIN diodes
    Gluszko, G. Lukasiak, L. Kilchytska, Valeriya[UCL] Chung, Tsung Ming[UCL] Olbrechts, Benoit[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2006) 7th NATO RCMCIS 2005 Regional Conference on Military Communications and Information Systems — Zegrze
    • Speech
    Double gate SOI MOSFET – Considerations for improved cut-off frequency
    Kranti, A.[UCL] Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2004) International Conference on Solid-State Devices and Materials – SSDM’2004 — Tokyo, Japan
    • Speech
    The Length-Dependence of the 1/f Noise of Graded-Channel SOI nMOSFETs
    Simoen, E. Claeys, C. Chung, Tsung Ming[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2007) 22nd Symposium on Microelectronics Technology and Devices - SBMicro'2007 — Rio de Janeiro, Brazil
    • Speech
    3-D simulations of multigate SOI MOSFETs in static and dynamic regimes
    Chung, Tsung Ming[UCL] Kranti, A.[UCL] Raskin, Jean-Pierre[UCL] (2005) First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’05 — Granada, Spain
    • Speech
    Characterization and modelling of quasi double-gate SOI MOSFETs
    Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2003) Union Radio-Scientifique Internationale (U.R.S.I.) — Brussels, Belgium
    • Speech
    Characterization and modelling of graded channel single gate and gate-all-around SOI MOSFETs
    Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2002) Union Radio-Scientifique Internationale (U.R.S.I.) — Brussels, Belgium
    • Speech
    On-wafer wideband characterization of advanced MOS devices
    Lederer, Dimitri[UCL] Chung, Tsung Ming[UCL] Pailloncy, G.[UCL] Raskin, Jean-Pierre[UCL] (2006) Union Radio-Scientifique Internationale (U.R.S.I.) Benelux Meeting — Eindhoven, The Netherlands
    • Speech
    DC and AC analyses of novel SOI MOSFET devices using 2-D and 3-D numerical simulations
    Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2005) ”, 3rd International Conference on Materials for Advanced Technologies – ICMAT 2005 and 9th International Conference on Advanced Materials (ICAM 2005) — Singapore
    • Speech
    Planar Double-Gate SOI MOS devices by wafer bonding over pre-patterned cavities
    Chung, Tsung Ming[UCL] Olbrechts, Benoit[UCL] Flandre, Denis[UCL] Södervall, U. Bengtsson, S. Raskin, Jean-Pierre[UCL] (2006) Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’05 — Grenoble, France
    • Speech
    Gate length scaling and microwave performance of double gate nano-transistors
    Kranti, A.[UCL] Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2003) International Conference on Nano Science and Technology (ICONSAT 2003) — Kolkata, India
    • Speech
    2-D and 3-D wideband simulations of multi-gate SOI MOSFETs
    Chung, Tsung Ming[UCL] Kranti, A.[UCL] Raskin, Jean-Pierre[UCL] (2005) 6th European Conference on ULtimate Integration of Silicon - ULIS’05 — Bologna, Italy
    • Journal article
    Gate length scaling and microwave performance of double gate nanotransistors
    Kranti, Abhinav[UCL] Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2005) International Journal of Nanoscience — Vol. 4, no.5-6, pp. 1021-1024 (October-December 2005)
    • Journal article
    DC and AC analyses of novel SOI MOSFET devices using 2-D and 3-D numerical simulations
    Chung, Tsung Ming[UCL] Raskin, Jean-Pierre[UCL] (2006) International Journal of Nanoscience — Vol. 5, no. 4-5, p. 639-644 (May)
    • Journal article
    Low-frequency noise behaviour of graded-channel SOI nMOSFETs
    Simoen, E. Claeys, C. Chung, Tsung Ming[UCL] Flandre, Denis[UCL] Pavanello, M.A. Martino, J.A. Raskin, Jean-Pierre[UCL] (2006) Solid-State Electronics — Vol. 51, no. 2, p. 260-267 (2007)
    • Journal article
    The Length-Dependence of the 1/f Noise of Graded-Channel SOI nMOSFETs
    Simoen, E. Claeys, C. Chung, Tsung Ming[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2007) ECS Transactions — Vol. 9, no. 1, p. 373-381 (September)
    • Journal article
    Low-frequency noise behavior of graded-channel SOI n-MOSFETs
    Simoen, E. Claeys, C. Chung, Tsung Ming[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Pavanello, M.A. Martino, J.A. (2007) Solid-State Electronics, Special issue — Vol. 51, no. 2, p. 260-267 (2007)
    • Speech
    Operation of double gate graded-channel transistors at low temperatures
    Pavanello, Marcelo Antonio Martino, Joao Antonio Chung, Tsung Ming[UCL] Kranti, Abhinav[UCL] Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] (2003) Seventh International Symposium on Low Temperature Electronics - as a part of the 204th Meeting of The Electrochemical Society — Orlando (USA)
    • Speech
    On true Silicon-on-Insulator MOSFETs: fabrication by Si layer transfer over the pre-defined cavity and electrical characterization
    Kilchytska, Valeriya[UCL] Chung, Tsung Ming[UCL] Olbrechts, Benoit[UCL] Vovk, Ya.N. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2007) 5th International Symposium on Control of Semiconductor Interfaces for Next Generation ULSI Process Integrations - ISCSI-V — Tokyo (Japan)
    • Speech
    Investigation of charge control related performances in double-gate SOI MOSFETs
    Kilchytska, Valeriya[UCL] Chung, Tsung Ming[UCL] van Meer, H. De Meyer, K. Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] (2003) 11th International Symposium Silicon-on-Insulator Technology and Devices — Paris (France)
    • Speech
    Impact of the Graded-Channel Architecture on Double Gate Transistors for High-Performance Analog Applications
    Pavanello, Marcelo Antonio Martino, Joao Antonio Chung, Tsung Ming[UCL] Kranti, Abhinav[UCL] Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] (2003) 11th International Symposium Silicon-on-Insulator Technology and Devices, Electrochemical Society Meeting — Paris (France)