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1. • Journal article

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   Low-power dihexylquaterthiophene-based thin film transistors for analog applications.

   Serban, Dana Alina[UCL] Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Vlad, Alexandru[UCL] Martin-Hoyas, Ana[UCL] Nysten, Bernard[UCL] Jonas, Alain M.[UCL] Geerts, Y. H. Lazzaroni, R. Bayot, Vincent[UCL] Melinte, Sorin[UCL] (2008) Applied Physics Letters — Vol. 92, no. 14, p. 143503(3) (2008)
2. • Journal article

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   Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs

   Alvarado, Joaquin Cerdeira, Antonio Kilchytska, Valeria Flandre, Denis[UCL] (2007) Microelectronics — Vol. 38, no. 3, p. 321-326 (2007)
3. • Journal article

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   Dynamic differential self-timed logic families for robust and low-power security ICs

   Hassoune, Ilham[UCL] Macé, François[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2007) Integration : the V L S I journal — Vol. 40, no. 3, p. 355-364 (2007)
4. • Journal article

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   Building ultra-low-power high-temperature digital circuits in standard high-performance SOI technology

   Bol, David[UCL] De Vos, Julien[UCL] Ambroise, Renaud[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2008) Solid-State Electronics — Vol. 52, no. 12, p. 1939-1945 (2008)
5. • Journal article

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   Composite ULP diode fabrication, modelling and applications in multi-V-th FD SOICMOS technology

   Levacq, David[UCL] Flandre, Denis[UCL] Liber, Christophe[UCL] Dessard, Vincent (2004) Solid-State Electronics — Vol. 48, no. 6, p. 1017-1025 (2004)
6. • Journal article

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   A new multi-valued current-mode adder based on negative-differential resistance using ULP diodes

   Hassoune, H Flandre, Denis[UCL] Legat, Jean-Didier[UCL] Drummond, A Gaudissart, Anne[UCL] Bol, David[UCL] Levacq, D. (2005) Solid-State Electronics — Vol. 49, no. 7, p. 1185-1191 (2005)
7. • Journal article

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   Comparison of self-heating effect in GAA and SOI mosfets

   Francis, P.[UCL] Colinge, JP.[UCL] Flandre, Denis[UCL] (1997) Microelectronics Reliability — Vol. 37, no. 1, p. 61-75 (1997)
8. • Journal article

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   Characteristics of Nmos/gaa (gate-all-around) Transistors Near Threshold

   Francis, Pascale[UCL] Flandre, Denis[UCL] Terao, Akira[UCL] Vandewiele, Fernand[UCL] (1992) Microelectronic Engineering — Vol. 19, no. 1-4, p. 815-818 (1992)
9. • Journal article

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   A new memory effect (MSD) in fully depleted SOI MOSFETs

   Bawedin, Maryline[UCL] Cristoloveanu, Sorin Yun, JG Flandre, Denis[UCL] (2005) Solid-State Electronics — Vol. 49, no. 9, p. 1547-1555 (2005)
10. • Journal article

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    Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

    de Souza, Michelly Flandre, Denis[UCL] Pavanello, Marcelo Antonio (2008) Solid-State Electronics — Vol. 52, no. 12, p. 1933-1938 (2008)
11. • Journal article

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    Effect of high-energy neutrons on MuGFETs

    Kilchytska, Valeriya[UCL] Alvarado Pulido, José Joaquin[UCL] Collaert, N. Rooyakers, R. Militaru, Otilia[UCL] Berger, G.[UCL] Flandre, Denis[UCL] (2010) Solid-State Electronics — Vol. 54, p. 196-204 (2009)
12. • Journal article

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    New experiments on the electrodeposition of iron in porous silicon

    Renaux, Christian[UCL] Scheuren, V[UCL] Flandre, Denis[UCL] (1999) Microelectronics Reliability — Vol. 40, no. 4-5, p. 877-879 (2000)
13. • Journal article

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    Hall effect measurements in double-gate SOI MOSFETs

    Vandooren, Anne Flandre, Denis[UCL] Cristoloveanu, Sorin Colinge, Jean-Pierre[UCL] (2001) Solid-State Electronics — Vol. 45, no. 10, p. 1793-1798 (2001)
14. • Journal article

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    Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

    Alvarado Pulido, José Joaquin[UCL] Iniguez, Benjamin Estrada, Magali Flandre, Denis[UCL] Cerdeira, Antonio (2009) International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields — Vol. 23, p. 88-106 (2009)
15. • Journal article

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    A self-tuning inductive powering system for biomedical implants

    Carta, R. Thoné, J. Gosset, Geoffroy[UCL] Cogels, G. Flandre, Denis[UCL] Puers, R. (2011) Procedia Engineering — Vol. 25, p. 1585-1588 (31/12/2011)
16. • Journal article

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    Deposition of a SiOx Film Showing Enhanced Surface Passivation

    Descamps, Pierre Asad, Salman Syed Kaiser, Vincent Campeol, Frederik Kuzma-Filipek, Izabela Duerinckx, Filip Szlufcik, Jozef Flandre, Denis[UCL] Kotipalli, Raja Venkata Ratan[UCL] Delamare, Romain[UCL] Beaucarne, Guy (2014) Energy Procedia — Vol. 55, p. 769–776 (2014)
17. • Journal article

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    Fully depleted SOI-CMOS technology for high temperature IC applications

    Gentinne, B.[UCL] Eggermont, Jean-Pierre[UCL] Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (1997) Materials Science and Engineering B: Solid-State Materials for Advanced Technology — Vol. 46, no. 1-3, p. 1-7 (1997)
18. • Journal article

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    A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation

    de Souza, Michelly Flandre, Denis[UCL] Pavanello, MA Iniguez, B. (2005) Solid-State Electronics — Vol. 49, no. 10, p. 1683-1692 (2005)
19. • Journal article

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    Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors

    Assalti, Rafael Martins d'Oliveira, Ligia Pavanello, Marcelo Antonio Flandre, Denis[UCL] de Souza, Michelly (2016) IET Circuits, Devices and Systems — , p. 1-7 (11/12/2015)
20. • Journal article

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    An analytical 3D model for short-channel effects in undoped FinFETs

    El Hamid, Hamdy Abd Iniguez, Benjamin Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Ismail, Yehea (2015) Journal of Computational Electronics — Vol. 14, no.2, p. 500-505 (02/2015)
21. • Journal article

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    Subthreshold Slope of Long-channel, Accumulation-mode P-channel Soi Mosfets

    Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] Vandewiele, Fernand[UCL] (1994) Solid-State Electronics — Vol. 37, no. 2, p. 289-294 (1994)
22. • Journal article

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    Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design

    Garduno, Salvador I. Alvarado Pulido, José Joaquin Cerdeira, Antonio Estrada, Magali Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2014) International Journal of Numerical Modelling: Electronic Networks, Devices and Fields — p. 15 (2014)
23. • Journal article

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    Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

    Novo, Carla Baptista, Joao Guazzeli da Silveira, Marcilei Giacomini, Renato Afzalian, Aryan Flandre, Denis[UCL] (2015) ECS transactions — Vol. 66, no.5, p. 101-107 (2015)
24. • Journal article

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    Integral function method for determination of nonlinear harmonic distortion

    Cerdeira, Antonio Flandre, Denis[UCL] Aleman, Miguel Estrada, Magali (2004) Solid-State Electronics — Vol. 48, no. 12, p. 2225-2234 (2004)
25. • Journal article

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    A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling

    Rudenko, Tamara Nazarov, Alexei Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2015) Solid-State Electronics — Vol. 117, p. 66-76 (28/11/2015)

Pages