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Displaying 1 - 25 of 967 results.

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    • Journal article
    Dynamic differential self-timed logic families for robust and low-power security ICs
    Hassoune, Ilham[UCL] Macé, François[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2007) Integration : the V L S I journal — Vol. 40, no. 3, p. 355-364 (2007)
    • Journal article
    Building ultra-low-power high-temperature digital circuits in standard high-performance SOI technology
    Bol, David[UCL] De Vos, Julien[UCL] Ambroise, Renaud[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2008) Solid-State Electronics — Vol. 52, no. 12, p. 1939-1945 (2008)
    • Journal article
    A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation
    Bawedin, Maryline[UCL] Cristoloveanu, Sorin Flandre, Denis[UCL] (2008) IEEE Electron Device Letters — Vol. 29, no. 7, p. 795-798 (2008)
    • Journal article
    Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
    Gimenez, SP Flandre, Denis[UCL] Pavanello, MA Martino, JA (2006) Microelectronics Journal — Vol. 37, no. 1, p. 31-37 (2006)
    • Journal article
    ULPFA: A New Efficient Design of a Power-Aware Full Adder
    Hassoune, Ilham[UCL] Flandre, Denis[UCL] O'Connor, Ian Legat, Jean-Didier[UCL] (2010) IEEE Transactions on Circuits and Systems Part 1: Regular Papers — Vol. 57, no. 8, p. 2066-2074 (2010)
    • Journal article
    Interests and Limitations of Technology Scaling for Subthreshold Logic
    Bol, David[UCL] Ambroise, Renaud[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2009) IEEE Transactions on Very Large Scale Integration (VLSI) Systems — Vol. 17, no. 10, p. 1508-1519 (2009)
    • Journal article
    Theoretical-analysis of the 2-terminal Mos Capacitor On Soi Substrate
    Paelinck, Pierre[UCL] Flandre, Denis[UCL] Terao, Akira[UCL] Vandewiele, F.[UCL] (1988) Journal de Physique — Vol. 49, no. C-4, p. 67-70 (1988)
    • Journal article
    A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's
    Iniguez, B.[UCL] Flandre, Denis[UCL] Gentinne, B.[UCL] Dessard, V.[UCL] (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 12, p. 2295-2303 (1999)
    • Journal article
    Physical modeling and design of thin-film SOI lateral PIN photodiodes
    Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2005) IEEE Transactions on Electron Devices — Vol. 52, no. 6, p. 1116-1122 (2005)
    • Journal article
    Composite ULP diode fabrication, modelling and applications in multi-V-th FD SOICMOS technology
    Levacq, David[UCL] Flandre, Denis[UCL] Liber, Christophe[UCL] Dessard, Vincent (2004) Solid-State Electronics — Vol. 48, no. 6, p. 1017-1025 (2004)
    • Journal article
    A New Analytical Model for the 2-terminal Mos Capacitor On Soi Substrate
    Flandre, Denis Vandewiele, F. (1988) IEEE Electron Device Letters — Vol. 9, no. 6, p. 296-299 (1988)
    • Journal article
    Modeling of the bulk versus SOICMOS performances for the optimal design of APS circuits in low-power low-voltage applications
    Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2003) IEEE Transactions on Electron Devices — Vol. 50, no. 1, p. 106-110 (January 2003)
    • Journal article
    25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process
    Adriaensen, Stéphane[UCL] Flandre, Denis[UCL] Dessard, Vincent[UCL] (2002) Electronics Letters — Vol. 38, no. 19, p. 1103-1104 (2002)

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