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1. • Speech

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   Optimization of optoelectrical properties of DC magnetron sputtered Cu 2 ZnSnS 4 absorber layer

   Zhukova, Maria[UCL] Kotipalli, Ratan Poncelet, Olivier[UCL] Samain, Louise Fourdrinier, Lionel Flandre, Denis[UCL] (2019) E-MRS 2019(European Materials Research Society) - Spring Meeting 2019 — Acropolis Congress Center Nice (France)
2. • Journal article

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   Low-power dihexylquaterthiophene-based thin film transistors for analog applications.

   Serban, Dana Alina[UCL] Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Vlad, Alexandru[UCL] Martin-Hoyas, Ana[UCL] Nysten, Bernard[UCL] Jonas, Alain M.[UCL] Geerts, Y. H. Lazzaroni, R. Bayot, Vincent[UCL] Melinte, Sorin[UCL] (2008) Applied Physics Letters — Vol. 92, no. 14, p. 143503(3) (2008)
3. • Journal article

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   Building ultra-low-power high-temperature digital circuits in standard high-performance SOI technology

   Bol, David[UCL] De Vos, Julien[UCL] Ambroise, Renaud[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2008) Solid-State Electronics — Vol. 52, no. 12, p. 1939-1945 (2008)
4. • Journal article

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   A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation

   Bawedin, Maryline[UCL] Cristoloveanu, Sorin Flandre, Denis[UCL] (2008) IEEE Electron Device Letters — Vol. 29, no. 7, p. 795-798 (2008)
5. • Journal article

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   Low-swing current mode logic (LSCML): A new logic style for secure and robust smart cards against power analysis attacks

   Hassoune, Ilham[UCL] Macé, François[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2006) Microelectronics — Vol. 37, no. 9, p. 997-1006 (2006)
6. • Journal article

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   Characterization and design methodology for low-distortion MOSFET-C analog structure's in multithreshold deep-submicrometer SOICMOS technologies

   Vancaillie, L.[UCL] Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Alvarado, Joaquin[UCL] Cerdeira, A. (2006) IEEE Transactions on Electron Devices — Vol. 53, no. 2, p. 263-269 (2006)
7. • Journal article

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   Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS

   Gimenez, SP Flandre, Denis[UCL] Pavanello, MA Martino, JA (2006) Microelectronics Journal — Vol. 37, no. 1, p. 31-37 (2006)
8. • Journal article

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   ULPFA: A New Efficient Design of a Power-Aware Full Adder

   Hassoune, Ilham[UCL] Flandre, Denis[UCL] O'Connor, Ian Legat, Jean-Didier[UCL] (2010) IEEE Transactions on Circuits and Systems Part 1: Regular Papers — Vol. 57, no. 8, p. 2066-2074 (2010)
9. • Journal article

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   An Ultra-Thin Ultraviolet Enhanced Backside- Illuminated Single-Photon Avalanche Diode with 650nm-Thin Silicon Body Based on SOI Technology

   Sabri Alirezaei, Iman[UCL] André, Nicolas[UCL] Amor, Sedki[UCL] Gérard, Pierre[UCL] Flandre, Denis[UCL] (2021) IEEE Journal of Selected Topics in Quantum Electronics — , p. 11 (2021)
10. • Journal article

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    Interests and Limitations of Technology Scaling for Subthreshold Logic

    Bol, David[UCL] Ambroise, Renaud[UCL] Flandre, Denis[UCL] Legat, Jean-Didier[UCL] (2009) IEEE Transactions on Very Large Scale Integration (VLSI) Systems — Vol. 17, no. 10, p. 1508-1519 (2009)
11. • Journal article

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    Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control

    Schramme, Maxime[UCL] Van Brandt, Léopold[UCL] Flandre, Denis[UCL] Bol, David[UCL] (2022) IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS — Vol. 69, no. 5, p. 1883-1895 (2022)
12. • Journal article

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    The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures

    GALEMBECK, EGON HENRIQUE SALERNO Renaux, Christian[UCL] SWART, JACOBUS WILLIBRORDUS Flandre, Denis[UCL] GIMENEZ, SALVADOR PINILLOS (2021) I E E E Journal of the Electron Devices Society — Vol. 9, p. 415-423 (2021)
13. • Journal article

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    Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application

    Alcalde Bessia, Fabricio Flandre, Denis[UCL] André, Nicolas[UCL] Irazoqui, Julieta[Fundacíon Instituto de Tecnologas Nucleares para la Salud, Bariloche/Argentina] Pérez, Martín Gómez Berisso, Mariano Lipovetzky, Jose (2020) Transactions on Nuclear Science — Vol. 67, no. 10, p. 2217-2223 (2019)
14. • Speech

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    Macro-Modeling Library in Simscape for MEMS Pressure Sensors Based on Energy-Flow Paradigm

    Delhaye, Thibault[UCL] Ge, C. Francis, Laurent[UCL] Flandre, Denis[UCL] Cretu, E. (2019) Design, Test, Integration & Packaging of MEMS/MOEMS — Paris (France)
15. • Speech

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    In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after gamma irradiation

    Amor, Sedki[UCL] Kilchytska, Valeriya[UCL] Tounsi, Fares[UCL] André, Nicolas[UCL] Francis, Laurent[UCL] Flandre, Denis[UCL] (2021) 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) — Caen, France
16. • Speech

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    Design Considerations of Ultra-Low-Power Polymer Gas Microsensors Based on Noise Analysis

    Puyol Troisi, Rafael[UCL] Pétré, Sylvain[UCL] Danlée, Yann Walewyns, Thomas Francis, Laurent[UCL] Flandre, Denis[UCL] (2020) 4th International Conference nanoFIS 2020—Functional Integrated nano Systems — Graz (Austria)
17. • Journal article

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    Anisotropic conductive film & flip-chip bonding for low-cost sensor prototyping on rigid & flex PCB

    Stoukatch, Serguei André, Nicolas[UCL] Delhaye, Thibault[UCL] Dupont, François Redouté, Jean-Michel Flandre, Denis[UCL] (2020) IEEE Sensors — Vol. 2020, p. 1-4 (2020)
18. • Journal article

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    High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells

    M. V. Cunha, José Oliveira, Kevin Lontchi Jioleo, Jackson[UCL] S. Lopes, Tomás A. Curado, Marco R. S. Barbosa, João Vinhais, Carlos Chen, Wei-Chao Borme, Jérôme Fonseca, Helder Gaspar, João Flandre, Denis[UCL] Edoff, Marika G. Silva, Ana P. Teixeira, Jennifer A. Fernandes, Paulo M. P. Salomé, Pedro (2021) Solar RRL — Vol. 2021, no.2000534, p. 13 (2021)
19. • Journal article

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    A 2.5-GHz Clock Recovery Circuit Based on a Back-Bias-Controlled Oscillator in 28-nm FDSOI

    Schramme, Maxime[UCL] Gimeno Gasca, Cecilia[UCL] Cathelin, Andreia Flandre, Denis[UCL] Bol, David[UCL] (2020) IEEE Solid-State Circuits Letters — Vol. 3, p. 478-481 (2020)
20. • Speech

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    Ultra-thin CIGS: 2D Modelling and impactful results for optimal cell design and characterizations

    Lontchi Jioleo, Jackson[UCL] Zhukova, Maria[UCL] Kovacic, Milan Krc, Janez Chen, Wei-Chao Edoff, Marika Bose, Sourav Salomé, Pedro Goffard, Julie Cattoni, Andrea Collin, Stéphane Flandre, Denis[UCL] (2020) 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) — Calgary (Canada)
21. • Journal article

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    Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation

    Galy, Philippe Soto, F. Bourgeat, J. Jacquier, B. Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2020) Microelectronics Reliability — Vol. 114, p. 113938 (2020)
22. • Speech

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    Micrometer-thin SOI Sensors for E-Skin Applications

    Wei, Peng André, Nicolas[UCL] Zeng, Xi[UCL] Sabri Alirezaei, Iman[UCL] Li, Guoli Bouterfa, Mohamed[UCL] Francis, Laurent[UCL] Flandre, Denis[UCL] (2020) 2020 IEEE SENSORS — Rotterdam (the Netherlands)
23. • Journal article

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    A Practical Approach for the Evaluation of Noise in Oscillator-Based Resistive Sensor Interfaces

    Puyol Troisi, Rafael[UCL] Molle, Yannick[UCL] Pétré, Sylvain Walewyns, Thomas Francis, Laurent[UCL] Flandre, Denis[UCL] (2020) 2020 IEEE SENSORS — , p. 1-4 (2020)
24. • Journal article

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    Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors

    Li, Guoli Fan, Zizheng André, Nicolas[UCL] Xu, Yongye Xia, Ying Iniguez, Benjamin Liao, Lei Flandre, Denis[UCL] (2021) IEEE Electron Device Letters — Vol. 42, no.1, p. 94-97 (2021)
25. • Journal article

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    High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

    Wan, Da Hao, Huang CHEN, Chen Abliz, Ablat Ye, Cong Liu, Xingqiang Zou, Xuming Li, Guoli Flandre, Denis[UCL] Liao, Lei (2020) IEEE Electron Device Letters — Vol. 41, no.6, p. 944-947 (2020)

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