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Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications
Primary tabs
| Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
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| Publication date | 2001 |
| Language | Anglais |
| Conference | "Tenth International Symposium on Silicon-on-Insulator Technology and Devices", Washington, DC (USA) (du 25/03/2001 au 30/03/2001) |
| Journal information | "Electrochemical Society. Proceedings" - Vol. 2001, no. 3, p. 233-238 (March 2001) |
| Peer reviewed | yes |
| issn | 0161-6374 |
| Host document | "Proceedings of the Tenth International Symposium on Silicon-on-Insulator Technology and Devices" |
| Publisher | Electrochemical Society, Inc. |
| Affiliations |
Universidade de São Paulo
- 1Laboratório de Sistemas Integráveis UCL - FSA/ELEC - Département d'électricité Universidade de São Paulo - Laboratório de Sistemas Integráveis |
| Keywords | SOI pMOSFETs |
| Links |
| Bibliographic reference | Bellodi, M. ; Iniguez, Benjamin ; Flandre, Denis ; Martino, J.A.. Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications.Tenth International Symposium on Silicon-on-Insulator Technology and Devices (Washington, DC (USA), du 25/03/2001 au 30/03/2001). In: Electrochemical Society. Proceedings, Vol. 2001, no. 3, p. 233-238 (March 2001)In: Proceedings of the Tenth International Symposium on Silicon-on-Insulator Technology and Devices, Electrochemical Society, Inc.2001 |
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| Permanent URL | http://hdl.handle.net/2078.1/97011 |