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Parasitic bipolar effects in graded-channel fully-depleted Silicon-on-Insulator nMOSFETs
Primary tabs
| Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
|---|---|
| Publication date | 2000 |
| Language | Anglais |
| Conference | "International Conference on Microelectronics and Packaging", Manaus (Brésil) (du 18/09/2000 au 24/09/2001) |
| Peer reviewed | yes |
| Host document | "Proceedings of the International Conference on Microelectronics and Packaging"- 97-102 |
| Affiliations |
Escola Politécnica da Universidade de São Paulo
- Laboratório de Sistemas Integráveis Centro de Investigacion y Estudios Avazandos del IPN - Laboratório de Sistemas Integráveis UCL - FSA/ELEC - Département d'électricité |
| Keywords | SOI nMOSFETs |
| Links |
| Bibliographic reference | Pavanello, Marcelo Antonio ; Martino, Joao Antonio ; Flandre, Denis. Parasitic bipolar effects in graded-channel fully-depleted Silicon-on-Insulator nMOSFETs.International Conference on Microelectronics and Packaging (Manaus (Brésil), du 18/09/2000 au 24/09/2001). In: Proceedings of the International Conference on Microelectronics and Packaging, 2000, p.97-102 |
|---|---|
| Permanent URL | http://hdl.handle.net/2078.1/95105 |