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0.25 µm Fully-Depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters

Bibliographic reference Vanmackelberg, M. ; Raynaud, Christine ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; et. al. 0.25 µm Fully-Depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters. In: Solid-State Electronics, Vol. 46, no. 3, p. 379-386 (2002)
Permanent URL http://hdl.handle.net/2078.1/94881