Lherbier, Aurélien
[UCL]
Dubois, Simon M-M
[UCL]
Declerck, Xavier
[UCL]
Roche, Stephan
Niquet, Yann-Michel
Charlier, Jean-Christophe
[UCL]
Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic pi-pi* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing the defect density, the decay of the semiclassical conductivities is predicted to saturate to a minimum value of 4e(2)/pi h over a large range (plateau) of carrier density (>0.5 X 10(14) cm(-2)). Additionally, strong contributions of quantum interferences suggest that the Anderson localization regime could be experimentally measurable for a defect density as low as 1%.
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Bibliographic reference |
Lherbier, Aurélien ; Dubois, Simon M-M ; Declerck, Xavier ; Roche, Stephan ; Niquet, Yann-Michel ; et. al. Two-Dimensional Graphene with Structural Defects: Elastic Mean Free Path, Minimum Conductivity, and Anderson Transition. In: Physical Review Letters, Vol. 106, no. 4, p. 046803 (2011) |
Permanent URL |
http://hdl.handle.net/2078/89226 |