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Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

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Alvarado Pulido, José Joaquin [UCL] Iniguez, Benjamin [Universitat Rovira i Virgili (URV)] Estrada, Magali [Centro de Investigacion y Estudios Avazandos del IPN] Flandre, Denis [UCL] Cerdeira, Antonio [Centro de Investigacion y Estudios Avazandos del IPN]
Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2009
Language Anglais
Journal information "International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields" - Vol. 23, p. 88-106 (2009)
Peer reviewed yes
Publisher John Wiley & Sons
issn 0894-3370
Publication status Publié
Affiliations UCL - FSA/ELEC - Département d'électricité
Universitat Rovira i Virgili (URV) - Department of Electrical Engineering
Centro de Investigacion y Estudios Avazandos del IPN
Keywords Verilog-AMS ; double-gate modelling ; Doped double-gate MOSFET ; Circuit simulation
Links
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  4. Poiroux, Advanced CMOS Devices on Bulk and SOI: Physics, Modeling and Characterization, 55 (2009)
  5. Tsormpatzoglou, Physica Status Solidi (c), 5, 3605 (2008)
  6. Borli, Solid-State Electronics, 52, 1489 (2008)
  7. Moldovan, Solid-State Electronics, 51, 655 (2007)
  8. Cerdeira, Solid-State Electronics, 52, 830 (2008)
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  10. Device simulator ATLAS, Silvaco International, 2007.
  11. Ge, IEEE Transactions on Electron Devices, 49, 287 (2002)
  12. Coram GJ. How to (and how not to) write a compact model in Verilog-A. Proceedings of 2004 IEEE International Behavioral Modeling and Simulation Conference (BMAS), San José, California, 2004.
  13. Corless, Advances in Computational Mathematics, 5, 329 (1996)
Bibliographic reference Alvarado Pulido, José Joaquin ; Iniguez, Benjamin ; Estrada, Magali ; Flandre, Denis ; Cerdeira, Antonio. Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation. In: International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields, Vol. 23, p. 88-106 (2009)
Permanent URL http://hdl.handle.net/2078.1/88405