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Study of Matching Properties of Graded-Channel SOI MOSFETs
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| Document type | Article de périodique (Journal article) – Article de recherche |
|---|---|
| Publication date | 2008 |
| Language | Anglais |
| Journal information | "Journal Integrated Circuit and Systems" - Vol. 3, no. 2, p. 69-75 (2008) |
| Peer reviewed | yes |
| issn | 1807-1953 |
| Publication status | Publié |
| Affiliations |
Centro Universitário da FEI, São Bernardo do Campo, SP, Brazil
- Electrical Engineering Department UCL - FSA/ELEC - Département d'électricité |
| Keywords | Charge-Based Model ; Graded-Channel ; MOSFET ; Mismatch ; Silicon-on-Insulator |
| Links |
| Bibliographic reference | de Souza, Michelly ; Flandre, Denis ; Pavanello, Marcelo. Study of Matching Properties of Graded-Channel SOI MOSFETs. In: Journal Integrated Circuit and Systems, Vol. 3, no. 2, p. 69-75 (2008) |
|---|---|
| Permanent URL | http://hdl.handle.net/2078.1/88395 |