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High-temperature perspectives of UTB SOI MOSFETs

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Kilchytska, Valeriya [UCL] Andrieu, F. [UCL] Faynot, O. [UCL] Flandre, Denis [UCL]

In this paper, we analyze, for the first time to our best knowledge, the high-temperature perspectives of Ultra-thin body (UTB) SOI MOSFETs. High-temperature behavior of threshold voltage, subthreshold slope, transconductance maximum and on-current is analyzed in details through measurements and 2D simulations. Particular attention is paid to the effect of buried oxide (BOX) and Si film thicknesses as well as channel doping on the degradation of main device parameters over the temperature range.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2011
Language Anglais
Conference "Ultimate Integration of Silicon Conference (ULIS)", Cork (Irlande) (du 14/03/2011 au 16/03/2011)
Peer reviewed yes
Host document "Proceedings of the 2011 Ultimate Integration of Silicon Conference (ULIS 2011)"
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Links
Bibliographic reference Kilchytska, Valeriya ; Andrieu, F. ; Faynot, O. ; Flandre, Denis. High-temperature perspectives of UTB SOI MOSFETs.Ultimate Integration of Silicon Conference (ULIS) (Cork (Irlande), du 14/03/2011 au 16/03/2011). In: Proceedings of the 2011 Ultimate Integration of Silicon Conference (ULIS 2011), 2011
Permanent URL http://hdl.handle.net/2078.1/87392