Afzalian, Aryan
[UCL]
Flandre, Denis
[UCL]
Physics and performances of a new concept of nanoscale MOSFET, the Gate-Modulated Resonant-Tunneling (RT)-FET, are investigated through 3D Non-Equilibrium Green's Function simulations. Owing to the additional barriers and the related longitudinal confinement, the density of states in a RT-FET is reduced in its off state, while remaining comparable, in its on state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off current and a faster increase of the current with gate voltage, i.e. an improved slope characteristic, and hence an improved ION/IOFF ratio, along with high on current and therefore good speed performance. RT-FETs could therefore be promising devices for future generation low power, high speed applications owing to superior delay-power trade-off than a MOSFET. In addition, RT-FETs are intrinsically immune to source-drain tunneling and appear promising candidate for extending the roadmap below 10nm.
Bibliographic reference |
Afzalian, Aryan ; Flandre, Denis. Transport-Confined Multi-Barrier FETs: A New Paradigm for Low-Leakage High On-Current Transistors.219th ECS Meeting (Montreal/QC/Canada, du 01/05/2011 au 06/05/2011). In: Trans. of 219th ECS Symp.:Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol. 35, no. 5, p. 295-300 (2011)In: Proceedings of the 219th ECS Meeting, The Electrochemical Society2011 |
Permanent URL |
http://hdl.handle.net/2078.1/86743 |