User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

New RF series extrinsic resistances extraction procedure for deep-submicron MOS transistors

Primary tabs

Tinoco, J.C. Raskin, Jean-Pierre [UCL]

The modeling of MOS transistors used for RF applications needs the definition of a lumped equivalent circuit where the intrinsic device and series extrinsic resistances are properly evaluated. The model accuracy depends on the extraction precision of each intrinsic lumped element. In order to determine the intrinsic device behavior, it is necessary to first remove the series extrinsic resistances. For this reason their extraction becomes critical for the modeling of MOS transistors in RF circuit design. Several extraction methods have been proposed; nevertheless, the measurement noise strongly affects the obtained results. The method proposed by Bracale and co-workers is the most robust extraction procedure against measurement noise, but fails to predict correctly the series extrinsic resistances for deep-submicron devices. For those reasons, we deeply analyze the method proposed by Bracale in order to understand and then overcome its limitations. Based on those analyses, a robust extraction method for deep-submicron devices is proposed.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2010
Language Anglais
Journal information "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields" - Vol. 23, no. 2, p. 107-126 (2010)
Peer reviewed yes
Publisher JohnWiley & Sons Ltd. ((United Kingdom) Bognor Regis)
issn 0894-3370
e-issn 1099-1204
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Deep sub-micron ; Deep-submicron devices ; Extraction method ; Extraction procedure ; Extrinsic resistances ; Intrinsic device ; Lumped element ; Lumped equivalent circuit ; Measurement Noise ; Model accuracy ; MOS transistors ; RF applications ; RF circuit design
Links
  1. Singh, IEEE Electron Device Letters, 27, 191 (2006)
  2. Lee S, Jagannathan B, Narasimha S, Chou A, Zamamer N, Johnson J, Williams R, Wagner L, Kim J, Plouchart J-O, Pekarik J, Springer S, Freeman G. Record RF performance of 45-nm SOI CMOS technology. In International Electron Devices Meeting Technical Digest, 2007; 255-258.
  3. Tiemeijer LF, Havens RJ, de Kart R, Scholten AJ, van Langevelde R, Klaassen DBM, Sasse GT, Boottement Y, Petot C, Bardy S, Glaria D, Scheer P, Baret S, van Haaren B, Clement C, Larchanche J-F, Lim I-S, Zlotnicka A, Duvallet A. Record RF performance of 90 nm CMOS technology. IEDM Technical Digest 2004; 441-444.
  4. Yang, IEEE Transactions on Electron Devices, 53 (2006)
  5. Suciu, IEEE Transactions on Electron Devices, 27, 1846 (1980)
  6. Chern, IEEE Electron Device Letters, 1, 170 (1980)
  7. Hu, IEEE Transactions on Electron Devices, 34, 2469 (1987)
  8. De La Moneda, IEEE Electron Device Letters, 3, 170 (1982)
  9. Chung, IEEE Transactions on Electron Devices, 40, 1709 (1993)
  10. Kim S-D, Narasimha S, Rim K. An integrated methodology for accurate extraction of S/D series resistance cmponents in nanoscale MOSFETs. Proceedings of IEEE International Electron Device Meeting 2005; 149.
  11. Chang YH, Wu YF, Ho CS. A simple method to extract source/drain series resistance for advanced MOSFETs. Proceeding IEEE Conference on Electron Devices and Solid-State Circuits 2007; 87.
  12. Kim, IEEE Transactions on Electron Devices, 55, 2779 (2008)
  13. Lee, IEEE Microwave and Guided Wave Letters, 7, 75 (1997)
  14. Pascht, IEEE Transactions on Microwave Theory and Techniques, 50, 1927 (2002)
  15. Lee, Electronics Letters, 41, 1325 (2005)
  16. Choi, IEEE Microwave and Wireless Components Letters, 18, 689 (2008)
  17. Lovelace, IEEE MTT-Symposium, 865 (1994)
  18. Torres-Torres, Electronics Letters, 39, 1476 (2003)
  19. Raskin, IEEE Transactions on Electron Devices, 45, 1017 (1998)
  20. Bracale, Analog Integrated Circuits and Signal Processing, 25, 157 (2000)
  21. García Sanchez, Microelectronics Reliability, 39, 1173 (1999)
  22. Ortiz-Conde, Electronics Leters, 30, 1013 (1994)
  23. Tinoco JC, Raskin J-P. Revised RF extraction methods for deep submicron MOSFETs. Procceding of European Microwave Week-EuMW'08, Amsterdam, Netherlands, 27-31 October 2008.
  24. Crupi, Solid-State Electronics, 50, 1780 (2006)
  25. Emam, Solid-State Electronics, 52, 1924 (2008)
  26. Dehan M, Vanhoenacker D, Raskin J-P. Alternative structures of SOI MOSFETs for improving DC and microwave characterisics. Proceedings of 31st European Microwave Conference EuMC, October 2001; 21.
  27. Tinoco JC, Raskin J-P. RF-extraction methods for MOSFET series resistances: a fair comparison. Proceedings of IEEE 7th International Caribbean Conference on Devices, Circuits and Systems, Paper 64, Cancun, Mexico, 28-30 April 2008.
Bibliographic reference Tinoco, J.C. ; Raskin, Jean-Pierre. New RF series extrinsic resistances extraction procedure for deep-submicron MOS transistors. In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 23, no. 2, p. 107-126 (2010)
Permanent URL http://hdl.handle.net/2078.1/85588