Verlinden, P.
Van de Wiele, F.
Stehelin, G.
David, J.P.
The authors present the design of silicon IBC cells and the fabrication technology which gives a 21% efficiency under one sun AM 1.5 (1000 W/m/sup 2/), 25.6% at 100X and 24.4% at 300X. Interdigitated back contact and point-contact silicon solar cells were fabricated and their efficiencies are compared. It is demonstrated that the technological process is able to maintain a high carrier lifetime in the device (780 mu sec).
Bibliographic reference |
Verlinden, P. ; Van de Wiele, F. ; Stehelin, G. ; David, J.P.. An interdigitated back contact solar cell with high efficiency under concentrated sunlight.Seventh E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR-10939-EN) (Seville, Spain, 27-31 October 1986). In: Goetzberger, A.; Palz, W.; Willeke, G.;, Seventh E.C. Photovoltaic Solar Energy Conference. Proceedings of theInternational Conference (EUR-10939-EN), Reidel1987, p. 885-889 |
Permanent URL |
http://hdl.handle.net/2078.1/68358 |