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An analytical model for GAA resistors

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Terao, A. Van de Wiele, F.

The GAA transistor is a new SOI device with a symmetrical double-gate structure. The authors have developed an analytical model to describe the volume inversion occurring in this device. The model is used to characterize the mobility of the carriers both at the surface and in the volume of the SOI film.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 1991
Conference "ESSDERC '91: 21st European Solid State Device Research Conference", Montreux, Switzerland (16-19 September 1991)
Peer reviewed yes
issn 0167-9317
Host document "Microelectronic Engineering"- Vol. 15, p. 233-236
Affiliation UCL
Links
Bibliographic reference Terao, A. ; Van de Wiele, F.. An analytical model for GAA resistors.ESSDERC '91: 21st European Solid State Device Research Conference (Montreux, Switzerland, 16-19 September 1991). In: Microelectronic Engineering, 1991, p.Vol. 15, p. 233-236
Permanent URL http://hdl.handle.net/2078.1/68302