User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Improvement of sub-0.25 mu m fully-depleted SOI CMOS analog performance by thinning the Si film

Primary tabs

Neve, A. Dessard, V. Delatte, Pierre [UCL] Brodeoux, V. Iniguez, B. Flandre, Denis [UCL]

The present work demonstrates that deep-submicron FD MOSFETs exhibit outstanding properties for analog applications, well superior to comparable PD or bulk Si devices, in terms of gain, frequency, noise, swing... performance, provided that full depletion is ensured in all modes of operation by correct process optimization.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2001
Language Anglais
Conference "Silicon-On-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium", Washington, DC (USA) (du 25/03/2001 au 29/03/2001)
Peer reviewed yes
Host document Cristoloveanu, S.; Hemment, P.L.F.; Izumi, K.T.; Celler, G.K.; Assaderaghi, F.; Kim, Y-W; ; "Silicon-on-Insulator Technology and Devices X. Proceedings of the TenthInternational Symposium (Electrochemical Society Proceedings Vol.2001-3)"- 271-276 (ISBN : 1-56677-309-1)
Publisher Electrochem. soc
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
Bibliographic reference Neve, A. ; Dessard, V. ; Delatte, Pierre ; Brodeoux, V. ; Iniguez, B. ; et. al. Improvement of sub-0.25 mu m fully-depleted SOI CMOS analog performance by thinning the Si film.Silicon-On-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium (Washington, DC (USA), du 25/03/2001 au 29/03/2001). In: Cristoloveanu, S.; Hemment, P.L.F.; Izumi, K.T.; Celler, G.K.; Assaderaghi, F.; Kim, Y-W;, Silicon-on-Insulator Technology and Devices X. Proceedings of the TenthInternational Symposium (Electrochemical Society Proceedings Vol.2001-3), Electrochem. soc2001, p.271-276
Permanent URL http://hdl.handle.net/2078.1/68090