El Kaamouchi, Majid
[UCL]
Dambrine, G.
Si Moussa, M.
Emam, Mostafa
[UCL]
Vanhoenacker-Janvier, Danielle
[UCL]
Raskin, Jean-Pierre
[UCL]
This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (V/sub BS/). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200 degrees C were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (V/sub TH/) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (V/sub GS/,/sub ZTC9m/) or the drain-current ZTC point (V/sub GS/,/sub ZTC1DS/) opening important opportunities in RF circuits design for nigh temperature applications.
| Bibliographic reference |
El Kaamouchi, Majid ; Dambrine, G. ; Si Moussa, M. ; Emam, Mostafa ; Vanhoenacker-Janvier, Danielle ; et. al. Body-biasing control on zero-temperature-coefficient in partially depleted SOI MOSFET.2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (Orlando, FL, USA, 23-25 January 2008). In: 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE2008, p. 114-117 |
| Permanent URL |
http://hdl.handle.net/2078.1/67753 |
