Revised RF extraction methods for deep submicron MOSFETs

Adequate modelling of MOS transistors for RF applications requires the accurate extraction of the extrinsic series resistances. In this paper, we fairly compare several RF extraction methods based on simulation results provided by an accurate foundry compact model of advanced RF MOSFETs. We present the relative sensitivity of each published RF characterization method to the measurement noise floor of Vectorial Network Analyzer. Additionally, the Bracale's method demonstrates to be less sensitive to the measurement noise but the extracted resistance values suffer from the mobility degradation due to the transversal electric field and the asymmetry of the device under test. Based on these theoretical and experimental results we propose a revised extraction procedure suitable for deep submicron transistors.