The formation of ytterbium silicide fabricated by annealing at 480 degrees C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi/sub 2-x/ phase, however, the structure is different from the hexagonal AlB/sub 2/ type.
Laszcz, A. ; Ratajczak, J. ; Czerwinski, A. ; Katcki, J. ; Srot, V. ; et. al. Characterization of ytterbium silicide formed in ultra high vacuum.16th International Conference on Microscopy of Semiconducting Materials (Oxford, UK, 17-20 March 2009). In: 16th International Conference on Microscopy of Semiconducting Materials, Iop publishing ltd.2010, p.Vol. 209, 012056 (4 pp.)