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MOS structure with a P/sup +/P profile

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Sinon, R. Hatert, R. van de Wiele, F.

A simple semi-analytical method is proposed to compute the principal characteristics of non-uniformly doped MOS devices. By considering an inversion layer with a non-zero width it is possible to compute the complete C-U curve. The influence of the doping profile on the characteristics of such structures is shown. The high frequency C-U curve calculated by means of the method leads to a more accurate definition of the threshold voltage. Finally, the described model may be applied to compute the drain current of non-uniformly doped P/sup +/P MOS transistors in good agreement with the experimental values.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 1976
Journal information "Physica Status Solidi. A: Applied Research" - Vol. 33, no. 2, p. 661-671 (1976)
Peer reviewed yes
issn 0031-8965
Publication status Publié
Affiliation UCL - Autre
Links
Bibliographic reference Sinon, R. ; Hatert, R. ; van de Wiele, F.. MOS structure with a P/sup +/P profile. In: Physica Status Solidi. A: Applied Research, Vol. 33, no. 2, p. 661-671 (1976)
Permanent URL http://hdl.handle.net/2078.1/66696