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Design criteria for increasing the bandwidth-efficiency product of GaAs p-i-n photodetectors

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Torrese, G. Huynen, Isabelle [UCL] Vander Vorst, André [UCL]

Using commercial and homemade simulation tools, this letter investigates how the geometrical and technological parameters of the p-i-n junction, particularly the p/sup +/- and n/sup +/-regions, influence the electrical and optical performances of GaAs p-i-n lumped and traveling-wave photodetectors (TWPDs). It is concluded that, for TWPDs, the electrical bandwidth and quantum efficiency can be optimized nearly separately as a function of the parameters of the p-, i-, and n-regions.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2001
Journal information "Microwave & Optical Technology Letters" - Vol. 29, no. 3, p. 150-155 (2001)
Peer reviewed yes
Publisher Wiley
issn 0895-2477
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
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  5. Wey, IEEE Photon Technol Lett, 7, 412 (1993)
  6. Lucovsky G., Schwarz R. F., Emmons R. B., Transit‐Time Considerations in p—i—n Diodes, 10.1063/1.1713426
  7. Huynen I., Salamone A., Serres M., A traveling-wave model for optimizing the bandwidth of p-i-n photodetectors in silicon-on-insulator technology, 10.1109/2944.736084
  8. Unlu M.S., Onat B.M., Leblebici Y., Transient simulation of heterojunction photodiodes-part II: analysis of resonant cavity enhanced photodetectors, 10.1109/50.372435
  9. Giboney K.S., Rodwell J.W., Bowers J.E., Traveling-wave photodetector theory, 10.1109/22.618429
Bibliographic reference Torrese, G. ; Huynen, Isabelle ; Vander Vorst, André. Design criteria for increasing the bandwidth-efficiency product of GaAs p-i-n photodetectors. In: Microwave & Optical Technology Letters, Vol. 29, no. 3, p. 150-155 (2001)
Permanent URL http://hdl.handle.net/2078.1/66251