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SOI CMOS transistors for RF and microwave applications

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Flandre, Denis [UCL] Raskin, Jean-Pierre [UCL] Vanhoenacker-Janvier, Danielle [UCL]

The new communication markets are very demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator (SOI) offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applications. After an overview of the SOI material, the properties of the SOI MOSFETs are analyzed and compared to bulk Si MOSFETs. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models to for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, various RF and microwave circuits are presented.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2001
Language Anglais
Journal information "International Journal of High Speed Electronics" - Vol. 11, no. 4, p. 1159-1248 (2001)
Peer reviewed yes
Publisher World Scientific Publishing Co. Pte. Ltd. (Singapore)
issn 0129-1564
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
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Bibliographic reference Flandre, Denis ; Raskin, Jean-Pierre ; Vanhoenacker-Janvier, Danielle. SOI CMOS transistors for RF and microwave applications. In: International Journal of High Speed Electronics, Vol. 11, no. 4, p. 1159-1248 (2001)
Permanent URL http://hdl.handle.net/2078.1/66239