User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Physics and Performance of Accumulation-mode Soi P-mosfets From Low (77 K) To High (150-320-degrees-c) Temperatures

Primary tabs

Flandre, Denis [UCL] Terao, Akira [UCL] Loo, Thierry [UCL] Colinge, Jean-Pierre [UCL]

A theoretical analysis of the physics of accumulation-mode SOI p-MOSFET's is supported by new experimental data at room temperature, then extended to low (77 K) and high (150-320-degrees-C) temperature domains. The electrical performances of these devices under such temperature conditions are discussed and shown to be compatible with circuit requirements.

Document type Article de périodique (Journal article)
Access type Accès restreint
Publication date 1992
Language Anglais
Journal information "Microelectronic Engineering" - Vol. 19, no. 1-4, p. 803-806 (1992)
Peer reviewed yes
Publisher Elsevier BV ((Netherlands) Amsterdam)
issn 0167-9317
e-issn 1873-5568
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
Bibliographic reference Flandre, Denis ; Terao, Akira ; Loo, Thierry ; Colinge, Jean-Pierre. Physics and Performance of Accumulation-mode Soi P-mosfets From Low (77 K) To High (150-320-degrees-c) Temperatures. In: Microelectronic Engineering, Vol. 19, no. 1-4, p. 803-806 (1992)
Permanent URL http://hdl.handle.net/2078.1/63534