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Total-dose effects in double-gate-controlled NPN bipolar transistors

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Vandooren, A [Digital DNA Labs., Motorola Inc., Austin, TX] Yuan, J Flandre, Denis [UCL] Colinge, Jean-Pierre [UCL]

The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar transistors has been investigated. The radiation hardness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is analyzed by means of device simulations and experimental results.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2001
Language Anglais
Conference "European Conference on Radiation and its Effects on Components and Systems (RADECS)", LOUVAIN LA NEUVE (Belgium) (du 11/09/2000 au 13/09/2000)
Peer reviewed yes
issn 0018-9499
Host document "Proceedings de RADECS 2001"
Publisher IEEE-inst Electrical Electronics Engineers Inc (New York)
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords Bipolar Transistor ; Double-gate Mosfets ; Radiation Effects ; Silicon-on-insulator
Links
Bibliographic reference Vandooren, A ; Yuan, J ; Flandre, Denis ; Colinge, Jean-Pierre. Total-dose effects in double-gate-controlled NPN bipolar transistors.European Conference on Radiation and its Effects on Components and Systems (RADECS) (LOUVAIN LA NEUVE (Belgium), du 11/09/2000 au 13/09/2000). In: Proceedings de RADECS 2001, IEEE-inst Electrical Electronics Engineers Inc : New York2001
Permanent URL http://hdl.handle.net/2078.1/61877