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Low temperature operation of graded-channel SOI nMOSFETs for analog applications

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Pavanello, MA Der Agopian, PG Martino, JA Flandre, Denis [UCL]

We present in this work is an analysis of die low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fully-depleted SOI nMOSFET.

Document type Article de périodique (Journal article)
Publication date 2002
Language Anglais
Journal information "Journal de Physique IV" - Vol. 12, no. 3, p. 23-26 (2002)
Peer reviewed yes
Publisher Springer
issn 1155-4339
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
Bibliographic reference Pavanello, MA ; Der Agopian, PG ; Martino, JA ; Flandre, Denis. Low temperature operation of graded-channel SOI nMOSFETs for analog applications. In: Journal de Physique IV, Vol. 12, no. 3, p. 23-26 (2002)
Permanent URL http://hdl.handle.net/2078.1/61742