Rudenko, Tamara
[ISP NASU, Ukraine]
Collaert, Nadine
[IMEC, Leuven]
De Gendt, S.
[IMEC, Leuven]
Kilchytska, Valeriya
[UCL]
Jurczak, Malgorzata
[IMEC, Leuven]
Flandre, Denis
[UCL]
In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior.
Bibliographic reference |
Rudenko, Tamara ; Collaert, Nadine ; De Gendt, S. ; Kilchytska, Valeriya ; Jurczak, Malgorzata ; et. al. Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode. In: Microelectronic Engineering, Vol. 80, p. 386-389 (17 June 2005) |
Permanent URL |
http://hdl.handle.net/2078.1/60892 |