We investigate nonlinear effects at low temperature in the I-V characteristics of four-terminal nanojunctions fabricated from InGaAs/ InAlAs heterostructures. The rectified voltage can be tuned by applying biases on side gates, as well as by changing cooldown conditions, I i.e., by controlling the conductances of the junctions' channels. In addition, we observe reversals in the slope of the I-V curves as the probe current grows. These reversals coincide with abrupt changes in the channels' conductances. We discuss possible interpretations of these observations, and provide a comparison with previous experimental results. (c) 2006 Elsevier B.V. All rights reserved.
Hackens, Benoît ; Gence, Loïk ; Faniel, Sébastien ; Gustin, Cédric ; Wallart, X. ; et. al. Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions.16th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-16) (Albuquerque(Nm), Jul 10-15, 2005). In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 34, no. 1-2, p. 515-518 (2006)
