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Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

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Luu, Aurore [UCL] Austin, Patrick Miller, Florent Buard, Nadine Carriere, Thierry Sarrabayrouse, Gerard

This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2010
Language Anglais
Conference "10th European Conference on Radiation and Its Effects on Components and Systems (RADECS - 09)", Bruges(Belgium) (Sep 14-18, 2009)
Journal information "IEEE Transactions on Nuclear Science" - Vol. 57, no. 4, p. 1900-1907 (2010)
Peer reviewed yes
issn 0018-9499
e-issn 1558-1578
Publisher Ieee-inst Electrical Electronics Engineers Inc (Piscataway)
Affiliation UCL - SST/IRMP - Institut de recherche en mathématiques et physique
Keywords Power Mosfet ; Seb ; Sensitive Volume ; Tcad Simulations ; Triggering Criteria
Links
Bibliographic reference Luu, Aurore ; Austin, Patrick ; Miller, Florent ; Buard, Nadine ; Carriere, Thierry ; et. al. Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS.10th European Conference on Radiation and Its Effects on Components and Systems (RADECS - 09) (Bruges(Belgium), Sep 14-18, 2009). In: IEEE Transactions on Nuclear Science, Vol. 57, no. 4, p. 1900-1907 (2010)
Permanent URL http://hdl.handle.net/2078.1/58796