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Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel

Bibliographic reference Burignat, S. ; Flandre, Denis ; Arshad, M. K. ; Kilchytska, Valeriya ; Andrieu, F. ; et. al. Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel.5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) (Chalmers Univ Technol, Gothenburg(Sweden), du 05/05/2010 au 07/05/2010). In: Solid-State Electronics, Vol. 54, no. 2, p. 213-219 (2010)In: Proceedings of the 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009), Pergamon-elsevier Science Ltd : Oxford2010
Permanent URL http://hdl.handle.net/2078.1/58619