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Silo Isolation Technique - a Study of Active and Parasitic Device Characteristics With Semi-recessed and Fully-recessed Field Oxides
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Document type | Article de périodique (Journal article) – Article de recherche |
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Access type | Accès restreint |
Publication date | 1988 |
Language | Anglais |
Journal information | "Solid-State Electronics" - Vol. 31, no. 5, p. 887-891 (1988) |
Peer reviewed | yes |
Publisher | Pergamon-elsevier Science Ltd (Oxford) |
issn | 0038-1101 |
e-issn | 1879-2405 |
Publication status | Publié |
Affiliation | UCL |
Links |
Bibliographic reference | Coppee, JL. ; Vandewiele, F.. Silo Isolation Technique - a Study of Active and Parasitic Device Characteristics With Semi-recessed and Fully-recessed Field Oxides. In: Solid-State Electronics, Vol. 31, no. 5, p. 887-891 (1988) |
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Permanent URL | http://hdl.handle.net/2078.1/53150 |