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Measurement of Threshold Voltages of Thin-film Accumulation-mode Pmos Soi Transistors

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Terao, A. [UCL] Flandre, Denis [UCL] Loratamayo, E. [UCL] Vandewiele, F. [UCL]

Accumulation-mode PMOS transistors on SOI are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time, as well as an intuitive physical interpretation of their dependence on the front- and back-gate voltages.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 1991
Language Anglais
Journal information "IEEE Electron Device Letters" - Vol. 12, no. 12, p. 682-684 (1991)
Peer reviewed yes
Publisher Ieee-inst Electrical Electronics Engineers Inc (New York)
issn 0741-3106
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords insulated gate field effect transistors ; thin film transistors ; semiconductor-insulator boundaries ; voltage measurement
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Bibliographic reference Terao, A. ; Flandre, Denis ; Loratamayo, E. ; Vandewiele, F.. Measurement of Threshold Voltages of Thin-film Accumulation-mode Pmos Soi Transistors. In: IEEE Electron Device Letters, Vol. 12, no. 12, p. 682-684 (1991)
Permanent URL http://hdl.handle.net/2078.1/50808