Colinge, JP.
Baie, X.
Bayot, Vincent
[UCL]
Grivei, E.
Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the device show reasonable agreement with the experimental characteristics.
| Bibliographic reference |
Colinge, JP. ; Baie, X. ; Bayot, Vincent ; Grivei, E.. A silicon-on-insulator quantum wire. In: Solid-State Electronics, Vol. 39, no. 1, p. 49-51 (1996) |
| Permanent URL |
http://hdl.handle.net/2078.1/47463 |
