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Large-scale synthesis of high-purity, one-dimensional alpha-Al2O3 structures

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Proost, Joris [UCL] Van Boxel, S

Nanostructures of alpha-Al2O3 were successfully synthesized by simple evaporation of the commercial high-purity oxide powders, followed by vapour condensation onto a sapphire substrate under controlled conditions of supersaturation without the presence of a catalyst. Synthesis was carried out in a specially designed reactor equipped with a laser set-up that allows monitoring of the growth process in situ. Detailed in situ interferometric and high-resolution substrate curvature measurements revealed, for the first time, that the growth of these one-dimensional structures is driven by a mechanical stress, which develops in an initially continuous, two-dimensional layer. This interaction between chemical activity and mechanical stress is shown to provide an important additional parameter to actively control the large-scale synthesis of one-dimensional oxide structures.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2004
Language Anglais
Journal information "Journal of Materials Chemistry" - Vol. 14, no. 20, p. 3058-3062 (2004)
Peer reviewed yes
Publisher Royal Soc Chemistry (Cambridge)
issn 0959-9428
e-issn 1364-5501
Publication status Publié
Affiliation UCL - FSA/MAPR - Département des sciences des matériaux et des procédés
Links
  1. Hu Jiangtao, Odom Teri Wang, Lieber Charles M., Chemistry and Physics in One Dimension:  Synthesis and Properties of Nanowires and Nanotubes, 10.1021/ar9700365
  2. Pan Z. W., Nanobelts of Semiconducting Oxides, 10.1126/science.1058120
  3. Wang Y. C., Leu I. C., Hon M. H., Effect of colloid characteristics on the fabrication of ZnO nanowire arrays by electrophoretic deposition, 10.1039/b111189m
  4. Huang M. H., Wu Y., Feick H., Tran N., Weber E., Yang P., Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport, 10.1002/1521-4095(200101)13:2<113::aid-adma113>3.0.co;2-h
  5. Valcárcel Víctor, Pérez Antonio, Cyrklaff Marek, Guitián Francisco, Novel Ribbon-Shaped α-Al2O3 Fibers, 10.1002/(sici)1521-4095(199811)10:16<1370::aid-adma1370>3.0.co;2-a
  6. Das Gopal, Thermal Stability of Single Crystal and Polycrystalline Alumina Fibers and 85% Al2O3-15 % SiO2 Fibers, Proceedings of the 19th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures—B: Ceramic Engineering and Science Proceedings, Volume 16, Issue 5 ISBN:9780470314784 p.977-986, 10.1002/9780470314784.ch41
  7. Peng X. S., Zhang L. D., Meng G. W., Wang X. F., Wang Y. W., Wang C. Z., Wu G. S., Photoluminescence and Infrared Properties of α-Al2O3Nanowires and Nanobelts, 10.1021/jp026028+
  8. Zhu H. Y., Riches J. D., Barry J. C., γ-Alumina Nanofibers Prepared from Aluminum Hydrate with Poly(ethylene oxide) Surfactant, 10.1021/cm010736a
  9. Pu Lin, Bao Ximao, Zou Jianping, Feng Duan, Individual Alumina Nanotubes, 10.1002/1521-3757(20010417)113:8<1538::aid-ange1538>3.0.co;2-1
  10. Wagner R. S., Ellis W. C., VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH, 10.1063/1.1753975
  11. Tang C.C., Fan S.S., Li P., Chapelle M.Lamy de la, Dang H.Y., In situ catalytic growth of Al2O3 and Si nanowires, 10.1016/s0022-0248(01)00852-1
  12. Morales A. M., A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires, 10.1126/science.279.5348.208
  13. Sears G.W, A growth mechanism for mercury whiskers, 10.1016/0001-6160(55)90041-9
  14. Fang X. S., Ye C. H., Peng X. S., Wang Y. H., Wu Y. C., Zhang L. D., Temperature-controlled growth of α-Al2O3nanobelts and nanosheets, 10.1039/b309193g
  15. Blakely J. M., Jackson K. A., Growth of Crystal Whiskers, 10.1063/1.1701338
  16. Sears G. W., DeVries R. C., Nucleation of Alumina at High Supersaturations and Subsequent Recrystallization, 10.1063/1.1700953
  17. Brenner S.S, Sears G.W, Mechanism of whisker growth—III nature of growth sites, 10.1016/0001-6160(56)90064-5
  18. Proost Joris, Spaepen Frans, Evolution of the growth stress, stiffness, and microstructure of alumina thin films during vapor deposition, 10.1063/1.1425076
  19. Doerner Mary F., Nix William D., Stresses and deformation processes in thin films on substrates, 10.1080/10408438808243734
  20. I. Barin , Thermochemical Data of Pure Substances, VCH Verlags Gesellschaft, Weinheim, 1993
  21. DRAGOO A. L., DIAMOND J. J., Transitions in Vapor-Deposited Alumina from 300o to 1200oC, 10.1111/j.1151-2916.1967.tb15000.x
  22. Thornton, Ceram. Bull., 56, 504 (1977)
  23. Haumesser Paul-Henri, Théry Jeanine, Daniel Pierre-Yves, Laurent Alain, Perrière Jacques, Roman Ruperto Gomez-San, Perez-Casero Rafael, Growth of crystalline doped β-alumina thin films by laser ablation, 10.1039/a608581d
  24. Schreiner M., Wruss W., Lux B., Growth morphology and growth mechanism of α-Al2O3 whiskers, 10.1016/0022-0248(83)90281-6
  25. Lux B., Colombier C., Altena H., Stjernberg K., Preparation of alumina coatings by chemical vapour deposition, 10.1016/0040-6090(86)90214-2
  26. Burton W. K., Cabrera N., Frank F. C., The Growth of Crystals and the Equilibrium Structure of their Surfaces, 10.1098/rsta.1951.0006
  27. Nagai Takeshi, Natori Katsuhide, Furusawa Takashi, Rate of Short Circuit Caused by Whisker Growth on Zn Electroplated Steels in Electronic Appliance, 10.2320/jinstmet1952.53.3_303
  28. Lee B.-Z., Lee D.N., Spontaneous growth mechanism of tin whiskers, 10.1016/s1359-6454(98)00045-7
  29. Bergauer A., Bangert H., Eisenmenger-Sittner Ch., Barna P.B., Whisker growth on sputtered AlSn (20 wt.% Sn) films, 10.1016/0040-6090(94)06371-0
  30. Tu K. N., Irreversible processes of spontaneous whisker growth in bimetallic Cu-Sn thin-film reactions, 10.1103/physrevb.49.2030
  31. Spaepen F, Interfaces and stresses in thin films, 10.1016/s1359-6454(99)00286-4
Bibliographic reference Proost, Joris ; Van Boxel, S. Large-scale synthesis of high-purity, one-dimensional alpha-Al2O3 structures. In: Journal of Materials Chemistry, Vol. 14, no. 20, p. 3058-3062 (2004)
Permanent URL http://hdl.handle.net/2078.1/39870