On nanoscale laminate structures, the interface cannot be identified any longer as the separation between two films of bulk materials. The formation of the interface defines the final composition and structure of the laminate structure. As such, the characterization of the interface becomes an important challenge. In this work the nanoscale laminate structures were formed by atomic layer deposition (ALD) of tungsten nitride carbide and tantalum nitride thin films on dense dielectrics [silicon carbide and silicon oxide (SiO2)]. The laminates were studied using x-ray reflectivity. The starting substrate surface is a primary factor in determining the density of the ALD layer. Moreover, in some cases, electron-density perturbations are observed in the vicinity of the interfacial region. A characterization strategy, using a density contrast layer between the silicon substrate and the SiO2 dielectric is presented. Depending on the chemical nature of precursors and substrate, ALD processes can either form specific interfacial organization or induce dielectric modifications, in any case, leading to unexpected metal-dielectric interactions. (C) 2005 American Institute of Physics.
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Bibliographic reference
Travaly, Y. ; Schuhmacher, J ; Hoyas, AM ; Van Hove, Marie-Anne ; Maex, K ; et. al. Interface characterization of nanoscale laminate structures on dense dielectric substrates by x-ray reflectivity. In: Journal of Applied Physics, Vol. 97, no. 8 (2005)
