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Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling

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Parvais, Bertrand [UCL] Cerdeira, A. Schreurs, D. Raskin, Jean-Pierre [UCL]

The harmonic and intermodulation distortions of both fully-depleted (FD) and partially-depleted (PD) silicon-on-insulator (SOI) MOSFETs are studied. The analysis is based on the recently developed integral function method and the results are compared to a third-order Volterra model of the MOSFET. This modelling helps us to understand the non-linear mechanisms of the considered devices and to predict their frequency behaviour. The models are validated through large-signal network analyser measurements. The devices performances are discussed. Copyright (c) 2005 John Wiley & Sons, Ltd.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2005
Language Anglais
Journal information "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields" - Vol. 18, no. 4, p. 283-296 (2005)
Peer reviewed yes
Publisher John Wiley & Sons Ltd (Chichester)
issn 0894-3370
e-issn 1099-1204
Publication status Publié
Affiliation UCL
Keywords distortion ; linearity ; intermodulation ; Volterra ; integral function method ; IFM ; silicon-on-insulator ; SOI ; partially-depleted ; PD ; fully-depleted ; FD
Links
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Bibliographic reference Parvais, Bertrand ; Cerdeira, A. ; Schreurs, D. ; Raskin, Jean-Pierre. Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling. In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 18, no. 4, p. 283-296 (2005)
Permanent URL http://hdl.handle.net/2078.1/39251