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A new adaptive multi-bias S-parameter measurement algorithm for transistor characterization

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van Niekerk, C Schreurs, D.

A new adaptive measurement algorithm is described for the control of an automated S-parameter measurement set-up used to characterize transistors for non-linear modelling. The procedure differs from previous algorithms in that is uses both the device DC- and S-parameter data to identify DC bias regions where the device characteristics are changing rapidly. By placing more bias points in these areas and less data points in regions where the device response stays constant, the non-linear behaviour of the device can be characterized more accurately while keeping the total volume of the experimental data and hence the measurement time to an acceptable level. Experimental results are presented that illustrates the operation of the adaptive algorithm as well as the influence that the selection procedure has on non-linear modelling results. Copyright (c) 2005 John Wiley & Sons, Ltd.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2005
Language Anglais
Journal information "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields" - Vol. 18, no. 4, p. 267-281 (2005)
Peer reviewed yes
Publisher John Wiley & Sons Ltd (Chichester)
issn 0894-3370
e-issn 1099-1204
Publication status Publié
Affiliation UCL
Keywords adaptive ; S-parameter ; characterization ; multi-bias ; transistor ; modelling ; non-linear
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Bibliographic reference van Niekerk, C ; Schreurs, D.. A new adaptive multi-bias S-parameter measurement algorithm for transistor characterization. In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 18, no. 4, p. 267-281 (2005)
Permanent URL http://hdl.handle.net/2078.1/39250