In this paper, the high-frequency properties of MOSFETs at low-temperature operation are investigated through measurements and electrical simulations. The experimental results show that the device achieves a 335-GHz f(max) and a 300-GHz f(t) when operating at low temperature (78 K), which constitutes, respectively, a 78% and 34% improvement compared to the room temperature performances (296 K). The minimum noise figure NFmin decreases from 1.4 dB (296 K) to 0.5 dB at 30 GHz (78 K), while the associated gain increases from 8 to 12 dB.
