Rolin, Cédric
[UCL]
Vasseur, K.
[UCL]
Schols, Sarah
[UCL]
Jouk, M.
[UCL]
Duhoux, G.
[UCL]
Mueller, R.
[UCL]
Genoe, J.
[UCL]
Heremans, P.
[UCL]
In this letter, we report on the growth of thin films of N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59 +/- 4% and deposition rates up to 15 angstrom/s. Top-contact transistors based on OVPD-grown PTCDI-C13H27 show high n-type mobilities (up to 0.3 cm(2)/V s) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed. (C) 2008 American Institute of Physics.
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Bibliographic reference |
Rolin, Cédric ; Vasseur, K. ; Schols, Sarah ; Jouk, M. ; Duhoux, G. ; et. al. High mobility electron-conducting thin-film transistors by organic vapor phase deposition. In: Applied Physics Letters, Vol. 93, no. 3 (2008) |
Permanent URL |
http://hdl.handle.net/2078.1/36459 |