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Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?

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Emam, Mostafa [UCL] Sakalas, Paulius Vanhoenacker-Janvier, Danielle [UCL] Raskin, Jean-Pierre [UCL] Lim, Tao Chuan Danneville, Francois

In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2010
Language Anglais
Journal information "IEEE Transactions on Electron Devices" - Vol. 57, no. 5, p. 1188-1191 (2010)
Peer reviewed yes
Publisher Ieee-inst Electrical Electronics Engineers Inc (Piscataway)
issn 0018-9383
e-issn 1557-9646
Publication status Publié
Affiliation UCL - SST/ICTM - Institute for Information and Communication. Technologies, Electronics and Applied Mathematics
Keywords Graded-channel MOS (GCMOS) ; mainstream MOSFETs ; modeling ; noise correlation coefficient ; silicon on insulator (SOI) ; thermal noise
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Bibliographic reference Emam, Mostafa ; Sakalas, Paulius ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre ; Lim, Tao Chuan ; et. al. Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?. In: IEEE Transactions on Electron Devices, Vol. 57, no. 5, p. 1188-1191 (2010)
Permanent URL http://hdl.handle.net/2078.1/33824