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Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors
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Document type | Article de périodique (Journal article) – Article de recherche |
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Access type | Accès libre |
Publication date | 2013 |
Language | Anglais |
Journal information | "IEEE Transactions on Electron Devices" - Vol. 60, no.3, p. 985-991 (2013) |
Peer reviewed | yes |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
issn | 0018-9383 |
e-issn | 1557-9646 |
Publication status | Publié |
Affiliation | CEA-Grenoble |
Keywords | Electrical and Electronic Engineering ; Electronic ; Optical and Magnetic Materials |
Links |
Bibliographic reference | Alarcon, Alfonso ; Nguyen, Viet-Hung ; et al.. Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors. In: IEEE Transactions on Electron Devices, Vol. 60, no.3, p. 985-991 (2013) |
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Permanent URL | http://hdl.handle.net/2078/269144 |