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Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style

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Peruzzi, Vinicius Vono [Department of Electrical Engineering, Centro Universitário da FEI (FEI), Sao Bernardo do Campo/Brazil] Renaux, Christian [UCL] Flandre, Denis [UCL] Gimenez, Salvador Pinillos [Department of Electrical Engineering, Centro Universitário da FEI (FEI), Sao Bernardo do Campo/Brazil]

On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with α angles equal to 53.1° and 90° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2017
Language Anglais
Conference "2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017)", Fortaleza (Brazil) (du 28/08/2017 au 01/09/2017)
Peer reviewed yes
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Devices Matching; ; SOI nMOSFETs; ; analog SOI CMOS ICs; ; new layouts of SOI MOSFETs
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Bibliographic reference Peruzzi, Vinicius Vono ; Renaux, Christian ; Flandre, Denis ; Gimenez, Salvador Pinillos. Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style.2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017) ( Fortaleza (Brazil), du 28/08/2017 au 01/09/2017).
Permanent URL http://hdl.handle.net/2078.1/197229