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30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC

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Idrissi, Hosni [UCL] Pichaud, B. [Université Paul Cézanne, Aix-Marseille III] Regula, G. Lancin, M.

Well-controlled population of dislocations are introduced in 4H-SiC by bending in cantilever mode and annealing between 400 and 700°C. The introduced defects consist of double stacking faults, each bound by a pair of 30° Si(g) partial dislocations, and the expansion of which is asymmetric. The velocity of each individual 30° Si(g) pair is directly measured as a function of stress and temperature on the surface of samples etched after deformation. The activation energies of the 30° Si(g) partial dislocation pairs are strongly stress dependent, ranging between 1.25 and 1.7 eV. These values are lower than the ones derived from plasticity experiments. This is probably because 30° (Si(g) pairs and double stacking faults are generated in N-doped 4H-SiC (N=2 x 10(18) cm-3), with their development being promoted by quantum well action.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès libre
Publication date 2007
Language Anglais
Journal information "Journal of Applied Physics" - Vol. 101, p. 113533 (2007)
Peer reviewed yes
Publisher AIP Publishing
issn 0021-8979
e-issn 1089-7550
Publication status Publié
Affiliation Université Paul Cézanne, Aix-Marseille III - Laboratoire TECSEN UMR 6122 CNRS
Keywords General Physics and Astronomy
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Bibliographic reference Idrissi, Hosni ; Pichaud, B. ; Regula, G. ; Lancin, M.. 30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC. In: Journal of Applied Physics, Vol. 101, p. 113533 (2007)
Permanent URL http://hdl.handle.net/2078/195259