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Experimental Evaluation of Mismatching on the Analog Characteristics of GC SOI MOSFETs

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Restani Alves, Camila [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] Pavanello, Marcelo Antonio [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] de Souza, Michelly [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] Flandre, Denis [UCL]

This paper presents an experimental study of mismatching on the analog characteristics of fully-depleted graded-channel SOI MOSFET in comparison to uniformly doped transistors. The study is carried out using dedicated structures to account for the mismatch that have been fabricated at the same chip and with the same technology. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès libre
Publication date 2017
Language Anglais
Conference "32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017)", Fortaleza (Brazil) (du 28/08/2017 au 01/09/2017)
Peer reviewed yes
Host document "Proceedings of the 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017)"
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Graded-channel transistor; SOI MOSFET; Mismatching; Electrical measurements
Links
Bibliographic reference Restani Alves, Camila ; Pavanello, Marcelo Antonio ; de Souza, Michelly ; Flandre, Denis. Experimental Evaluation of Mismatching on the Analog Characteristics of GC SOI MOSFETs.32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017) (Fortaleza (Brazil), du 28/08/2017 au 01/09/2017). In: Proceedings of the 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017), 2017
Permanent URL http://hdl.handle.net/2078.1/192617