User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

On the temperature dependence of frequency dispersion in C-V measurements of III-V MOS devices and its application in spatial profiling of border traps

Primary tabs

download
  • Open access
  • PDF
  • 751.96 K
Vais, Abhitosh [Department of Electrical Engineering, KU Leuven, B-3000 Leuven, Belgium] Lin, Han-Chung [IMEC, Kapeldreef 75, B-3001 Leuven, Belgium] Dou, Chunmeng [ Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan] Martens, Koen [Department of Electrical Engineering, KU Leuven, B-3000 Leuven, Belgium] Ivanov, Tzvetan [IMEC, Kapeldreef 75, B-3001 Leuven, Belgium] Raskin, Jean-Pierre [UCL]

This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès libre
Publication date 2015
Language Anglais
Journal information "Applied Physics Letters" - Vol. 107, no.5, p. 053504-1 - 053504-5 (May 2015)
Peer reviewed yes
Publisher American Institute of Physics
issn 0003-6951
e-issn 1077-3118
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Links
  1. del Alamo Jesús A., Nanometre-scale electronics with III–V compound semiconductors, 10.1038/nature10677
  2. Stemmer Susanne, Chobpattana Varistha, Rajan Siddharth, Frequency dispersion in III-V metal-oxide-semiconductor capacitors, 10.1063/1.4724330
  3. Hasegawa H., Sawada T., Electrical modeling of compound semiconductor interface for FET device assessment, 10.1109/t-ed.1980.19986
  4. Sonnet Arif M., Hinkle Christopher L., Heh Dawei, Bersuker Gennadi, Vogel Eric M., Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics, 10.1109/ted.2010.2059029
  5. Galatage R. V., Zhernokletov D. M., Dong H., Brennan B., Hinkle C. L., Wallace R. M., Vogel E. M., Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states, 10.1063/1.4886715
  6. Heiman F.P., Warfield G., The effects of oxide traps on the MOS capacitance, 10.1109/t-ed.1965.15475
  7. Kim Eun Ji, Wang Lingquan, Asbeck Peter M., Saraswat Krishna C., McIntyre Paul C., Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals, 10.1063/1.3281027
  8. Yuan Yu, Yu Bo, Ahn Jaesoo, McIntyre Paul C., Asbeck Peter M., Rodwell Mark J. W., Taur Yuan, A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices, 10.1109/ted.2012.2197000
  9. Johansson Sofia, Berg Martin, Persson Karl-Magnus, Lind Erik, A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs, 10.1109/ted.2012.2231867
  10. Zhang Chen, Xu Min, Ye Peide D., Li Xiuling, A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors, 10.1109/led.2013.2255256
  11. J. P. Campbell , J. Qin , K. P. Cheung , L. C. Yu , J. S. Suehle , A. Oates , and K. Sheng in Proceedings of IEEE International Reliability Physics Symposium Technical Digest (2009), p. 382.
  12. Grasser Tibor, Reisinger Hans, Wagner Paul-Jürgen, Kaczer Ben, Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors, 10.1103/physrevb.82.245318
  13. Fleetwood D. M., Winokur P. S., Reber R. A., Meisenheimer T. L., Schwank J. R., Shaneyfelt M. R., Riewe L. C., Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices, 10.1063/1.353777
  14. Ameen M., Nyns L., Sioncke S., Lin D., Ivanov T., Conard T., Meersschaut J., Feteha M. Y., Van Elshocht S., Delabie A., Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3 and Sc2O3 Interfacial Layers by Atomic Layer Deposition, 10.1149/2.0021411jss
  15. Sioncke S., Nyns L., Ivanov T., Lin D., Franco J., Vais A., Ameen M., Delabie A., Xie Q., Maes J. W., Tang F., Givens M., Van Elshocht S., Holsteyns F., Barla K., Collaert N., Thean A., De Gendt S., Heyns M., Engineering the III-V Gate Stack Properties by Optimization of the ALD Process, 10.1149/06409.0133ecst
  16. Hickmott T. W., Admittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAs, 10.1103/physrevb.44.13487
  17. Henry C. H., Lang D. V., Nonradiative capture and recombination by multiphonon emission in GaAs and GaP, 10.1103/physrevb.15.989
  18. Kirton M. J., Uren M. J., Capture and emission kinetics of individual Si:SiO2interface states, 10.1063/1.97000
  19. Grasser Tibor, Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities, 10.1016/j.microrel.2011.09.002
  20. Tewksbury T.L., Hae-Seung Lee, Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs, 10.1109/4.278345
  21. Garetto Davide, Randriamihaja Yoann Mamy, Rideau Denis, Zaka Alban, Schmid Alexandre, Leblebici Yusuf, Jaouen Hervé, Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects, 10.1109/ted.2011.2181389
  22. Larcher L., Statistical simulation of leakage currents in mos and flash memory devices with a new multiphonon trap-assisted tunneling model, 10.1109/ted.2003.813236
  23. Muñoz Ramo D., Gavartin J. L., Shluger A. L., Bersuker G., Spectroscopic properties of oxygen vacancies in monoclinicHfO2calculated with periodic and embedded cluster density functional theory, 10.1103/physrevb.75.205336
  24. Vandelli L., Padovani A., Larcher L., Southwick R. G., Knowlton W. B., Bersuker G., A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks, 10.1109/ted.2011.2158825
  25. Dou Chunmeng, Lin Dennis, Vais Abhitosh, Ivanov Tsvetan, Chen Han-Ping, Martens Koen, Kakushima Kuniyuki, Iwai Hiroshi, Taur Yuan, Thean Aaron, Groeseneken Guido, Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures, 10.1016/j.microrel.2013.12.023
  26. He Wei, Ma T. P., Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO, 10.1063/1.1614837
  27. Reiner James W., Cui Sharon, Liu Zuoguang, Wang Miaomiao, Ahn Charles H., Ma T. P., Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics, 10.1002/adma.200904311
  28. Chen Han-Ping, Ahn Jaesoo, McIntyre Paul C., Taur Yuan, Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics, 10.1116/1.4864618
  29. Ma T.P., Inelastic Electron Tunneling Spectroscopy (IETS) Study of Ultra-Thin Gate Dielectrics for Advanced CMOS Technology, 10.1149/1.3572304
  30. N. Conrad , M. Si , S. H. Shin , J. J. Gu , J. Zhang , M. A. Alam , and P. D. Ye , in Proceedings of IEEE International Electron Devices Meeting (2014), p. 20.1.1.
  31. Simoen Eddy, Lee Jae Woo, Claeys Cor, Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra, 10.1109/ted.2013.2295025
  32. D. Veksler , G. Bersuker , S. Rumyantsev , M. Shur , H. Park , C. Young , K. Y. Lim , W. Taylor , and R. Jammy , in Proc. IEEE Int. Reliab. Phys. Symp. (2010), p. 73.
Bibliographic reference Vais, Abhitosh ; Lin, Han-Chung ; Dou, Chunmeng ; Martens, Koen ; Ivanov, Tzvetan ; et. al. On the temperature dependence of frequency dispersion in C-V measurements of III-V MOS devices and its application in spatial profiling of border traps. In: Applied Physics Letters, Vol. 107, no.5, p. 053504-1 - 053504-5 (May 2015)
Permanent URL http://hdl.handle.net/2078.1/187248