In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal–oxide–semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of −580 mV for N-channel transistors, and −360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.
Sedki, Amor ; André, Nicolas ; Kilchytska, Valeriya ; Tounsi, F. ; Mezghani, B. ; et. al. In-situ Thermal Annealing of On-Membrane SOI Semiconductor-Based Devices After High Gamma Dose irradiation. In: Nanotechnology, Vol. 28, no.18, p. 16 (07/04/2017)
