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Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature

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Molto, A.R. [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] Doria, R.T. [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] de Souza, M. [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] Flandre, Denis [UCL] Pavanello, M.A. [Centro Universitario FEI, Sao Bernardo do Campo/Brazil]

This work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear regime at VDS=50mV. It is shown that the origin of the noise changes from carrier number fluctuations to mobility fluctuations as the temperature is increased. Additionally, the generation and recombination noise plays a significant role on the overall noise with the temperature rise.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2016
Language Anglais
Conference "31st Symposium on Microelectronics Technology and Devices (SBMicro)", Salvador (Brazil) (du 29/08/2016 au 03/09/2016)
Peer reviewed yes
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Temperature ; Submicron ; Low Frequency Noise (LFN) ; GC SOI
Links
Bibliographic reference Molto, A.R. ; Doria, R.T. ; de Souza, M. ; Flandre, Denis ; Pavanello, M.A.. Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature.31st Symposium on Microelectronics Technology and Devices (SBMicro) (Salvador (Brazil), du 29/08/2016 au 03/09/2016).
Permanent URL http://hdl.handle.net/2078.1/178070