d'Oliveira, L.M.
[Electr. Eng. Dept., Centro Universitario da FEI, Brazil]
Doria, R.T.
[Electr. Eng. Dept., Centro Universitario da FEI, Brazil]
Pavanelo, Marcelo Antonio
[Electr. Eng. Dept., Centro Universitario da FEI, Brazil]
Flandre, Denis
[UCL]
de Souza, Michelly
[Electr. Eng. Dept., Centro Universitario da FEI, Brazil]
This paper compares the harmonic distortion of n- and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n- and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n- and p-type composite MOSFETs.
| Bibliographic reference |
d'Oliveira, L.M. ; Doria, R.T. ; Pavanelo, Marcelo Antonio ; Flandre, Denis ; de Souza, Michelly. Effect of channel doping concentration on the harmonic distortion of asymmetric n- and p-type self-cascode MOSFETs.2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015) (Salvador, du 31/08/2015 au 04/09/2015). In: Proceedings of SBMicro 2015, 2015 |
| Permanent URL |
http://hdl.handle.net/2078.1/171037 |
