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Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications

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Assalti, R. [Centro Universitario da Fei, Brazil] Pavanello, Marcelo Antonio [Centro Universitario da Fei, Brazil] Flandre, Denis [UCL] de Souza, Michelly [Centro Universitario da Fei, Brazil]

This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2015
Language Anglais
Conference "2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015)", Salvador (du 31/08/2015 au 04/09/2015)
Peer reviewed yes
Host document "Proceedings of SBMicro 2015" (ISBN : 978-1-4673-7162-9)
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Asymmetric Self-Cascode ; FD SOI nMOSFETs ; Graded-Channel ; Common-source current mirror ; Source-follower ; Common-source amplifier
Links
Bibliographic reference Assalti, R. ; Pavanello, Marcelo Antonio ; Flandre, Denis ; de Souza, Michelly. Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications.2015 30th Symposium on Microelectronics Technology and Devices (SBMicro 2015) (Salvador, du 31/08/2015 au 04/09/2015). In: Proceedings of SBMicro 2015, 2015
Permanent URL http://hdl.handle.net/2078.1/170457