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Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

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Novo, Carla [Centro Universitario da FEI, Brazil] Baptista, Joao [Centro Universitario da FEI, Brazil] Guazzeli da Silveira, Marcilei [Centro Universitario da FEI, Brazil] Giacomini, Renato [Centro Universitario da FEI, Brazil] Afzalian, Aryan [TSMC - Logic Advanced Development] Flandre, Denis [UCL]

This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influences. Experimental results showed that the mode of operation changes the behavior of the devices concerning dark and photocurrents, while the temperature variation produces different trades in quantum efficiency related to the absorption length and the diffusion length variation.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2015
Language Anglais
Journal information "ECS transactions" - Vol. 66, no.5, p. 101-107 (2015)
Peer reviewed yes
Publisher Electrochemical Society, Inc.
issn 1938-5862
e-issn 1938-6737
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords SOI ; Photodiodes
Links
Bibliographic reference Novo, Carla ; Baptista, Joao ; Guazzeli da Silveira, Marcilei ; Giacomini, Renato ; Afzalian, Aryan ; et. al. Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation. In: ECS transactions, Vol. 66, no.5, p. 101-107 (2015)
Permanent URL http://hdl.handle.net/2078.1/165032